annie wang : yue-yue0508@163.com 13714470621 1 UM3016 n-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage 30 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 15 a i d @t a =70 continuous drain current, v gs @ 10v 1 12 a i dm pulsed drain current 2 75 a eas single pulse avalanche energy 3 317 mj i as avalanche current 53.8 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range -55 to 175 t j operating junction temperature range -55 to 175 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 24 /w id 30v 4m ? 15a the UM3016 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3016 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data s0p8 pin configuration product summery bv rd dss s(on)
annie wang : yue-yue0508@163.com 13714470621 2 n-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.021 --- v/ v gs =10v , i d =15a --- 3.4 4 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =10a --- 5.2 6 m : v gs(th) gate threshold voltage 1.0 1.5 2.5 v ? v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -5.73 --- mv/ v ds =24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =5v , i d =15a --- 26.5 --- s r g gate resistance v ds =10v , v gs =0v , f=1mhz --- 1.4 2.8 : q g total gate charge (4.5v) --- 31.6 q gs gate-source charge --- 6.1 q gd gate-drain charge v ds =20v , v gs =4.5v , i d =12a --- 13.8 nc t d(on) turn-on delay time --- 11.2 t r rise time --- 49 t d(off) turn-off delay time --- 35 t f fall time v dd =15v , v gs =10v , r g =1.5 : i d =15a --- 7.8 ns c iss input capacitance --- 3075 c oss output capacitance --- 400 c rss reverse transfer capacitance v ds =15v , v gs =0v , f=1mhz --- 315 pf symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =30a 98 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 --- --- 15 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- 75 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =53.8a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UM3016
annie wang : yue-yue0508@163.com 13714470621 3 n-ch 30v fast switching mosfets 0 20 40 60 80 100 120 00.250.50.751 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 3.0 3.5 4.0 4.5 5.0 246810 v gs (v) r dson (m ? ) i d =12a 0 2 4 6 8 10 12 0 0.3 0.6 0.9 1.2 v sd , source-to-drain voltage (v) i s source current(a) t j =175 t j =25 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) v gs gate to source voltage (v) i d =12a 0 0.5 1 1.5 -50 25 100 175 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 25 100 175 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM3016
annie wang : yue-yue0508@163.com 13714470621 4 n-ch 30v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t a +p dm xr ja t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM3016
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